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TECHNICAL REPORTS

Plant and Environment Interactions

Fertilizer Residence Time Affects Nitrogen Uptake Efficiency and Growth of Sweet Corn

^a Univ. of Florida, IFAS, Agricultural and Biological Engineering Dep., 234 Fraziers-Rogers Hall, Gainesville, FL 32611-0570
^b Univ. of Florida, IFAS, Agronomy Dep., 304 Newell Hall, Gainesville, FL 32611; Wageningen Univ., Biological Farming Systems/Plant Production Systems Marijkeweg 22, 6709 PG, Wageningen, The Netherlands

^* Corresponding author (lzota{at}ufl.edu).

Received for publication August 30, 2007. Understanding plant N uptake dynamics is critical for increasing fertilizer N uptake efficiency (FUE) and minimize the risk of N leaching. The objective of this research was to determine the effect of residence time of N fertilizer on N uptake and FUE of sweet corn. Plants were grown in 25 L columns during the fall and spring to mimic short-term N uptake dynamics. Nitrogen was applied either 1, 3, or 7 d before a weekly leaching event, using KNO₃ solution (total of 393 kg N ha^–1). Residence times (t_R) were t_R–1, t_R–3, and t_R–7 d before weekly removal of residual soil N. Plant N uptake was calculated by comparing weekly N recovery from planted with non-planted columns. During the fall, N uptake values at 70 d after emergence were 59, 73, and 126 kg N ha^–1. During the spring, corresponding values were 54, 108, and 159 kg N ha^–1. A linear response of plant growth and yield to the t_R was observed under cooler conditions, whereas a quadratic response occurred under warmer conditions. There was correlation between root length density and yield. It is concluded that increasing N fertilizer residence time, which is indicative of better irrigation practices, enhanced overall sweet corn growth, yield, N uptake, and FUE, consequently reduced the risk of N being leached below the root zone before complete N uptake.

Abbreviations: DAE, days after emergence • FUE, Fertilizer-N uptake efficiency • NPA, nitrogen plant accumulation • RDM, root dry matter • RLD, root length density • t_R, residence time

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